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Infineon Technologies IPP139N08N3 G
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IPP139N08N3 G
Manufacturers: Infineon Technologies
Qty: 290
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Description: MOSFET N-KANAL POWER MOS
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:80 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:45 A
Rds On - Drain-Source Resistance:13.6 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:2.8 V
Qg - Gate Charge:19 nC
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:79 W
Mounting Style:Through Hole
Package / Case:TO-220-3
Packaging:Tube
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